2011 · 44 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignDigital Integrated Circuit DesignHigh-frequency Semiconductor DevicesLow-power Digital Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsVoltage RegulatorsCmos Analog Integrated CircuitsCmos Digital Circuit DesignInput Voltage RegulationLow-dropout Regulator DesignLow-dropout RegulatorsLow-power Cmos DesignLow-voltage Cmos DesignResponse Time
A fast transient-response digital low-dropout (LDO) voltage regulator comprising only low-voltage MOS transistors was developed. The input voltage can be higher than the withstand voltage of the low-voltage MOS transistors by the proposed withstand-voltage relaxation scheme. The switching frequency of 1 GHz can be achieved using small-dimension low-voltage power-MOS transistors. The LDO occupies only 0.057 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> area using 40-nm CMOS technology, and covers a wide range of load currents from 400 μA to 250 mA. The response time is only 0.07 μs.
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