Crystalline and electronic energy structure of OMVPE-grown AlGaInP/GaAs

Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energy

Akiko Gomyo, T. Suzuki, K. Kobayashi et al. · Applied Physics Letters · 1987 · 438 citations

Natural Sciences, Materials Science, Physics +17

Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

Masayuki Ishikawa, Yasuo Ohba, Hideto Sugawara et al. · Applied Physics Letters · 1986 · 192 citations

Engineering, Electrical Engineering, Materials Science +17

Room-temperature CW operation of AlGaInP double-heterostructure visible lasers

K. Kobayashi, S. Kawata, Akiko Gomyo et al. · Electronics Letters · 1985 · 158 citations

Engineering, Electrical Engineering, Materials Science +12

Ordering in GaAs1−<i>x</i>Sb<i>x</i> grown by molecular beam epitaxy

Y. E. Ihm, N. Ōtsuka, J. F. Klem et al. · Applied Physics Letters · 1987 · 136 citations

Natural Sciences, Materials Engineering, Materials Science +17

Atomic Structure of Ordered InGaP Crystals Grown on (001)GaAs Substrates by Metalorganic Chemical Vapor Deposition

Osamu Ueda, M. Takikawa, J. Komeno et al. · Japanese Journal of Applied Physics · 1987 · 134 citations

Natural Sciences, Materials Engineering, Materials Science +15