EBIC study of recombination activity of oxygen precipitation related defects in si

Recombination properties of oxygen-precipitated silicon

James C. M. Hwang, D.K. Schroder · Journal of Applied Physics · 1986 · 141 citations

Engineering, Materials Engineering, Materials Science +17

Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level

M. Kittler, C. Ulhaq-Bouillet, V. Higgs · Journal of Applied Physics · 1995 · 89 citations

Engineering, Materials Engineering, Materials Science +17

Impact of oxygen related extended defects on silicon diode characteristics

Jan Vanhellemont, E. Simoen, A. Kaniava et al. · Journal of Applied Physics · 1995 · 74 citations

Engineering, Electrical Engineering, Materials Science +17

Gettering of copper by bulk stacking faults and punched-out dislocations in Czochralski-grown silicon

Bo Shen, Takashi Sekiguchi, J. Jabłoński et al. · Journal of Applied Physics · 1994 · 71 citations

Engineering, Materials Engineering, Materials Science +17

Two types of electron-beam-induced current behaviour of misfit dislocations in Si(Ge): experimental observations and modelling

M. Kittler, W. Seifert · Materials Science and Engineering B · 1994 · 30 citations

Natural Sciences, Materials Engineering, Materials Science +16