Minority-carrier lifetime in GaAs thin films

Abstract

Double-heterostructure devices of type AlxGa1−xAs/GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×1016 cm−3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.