UV ozone cleaning of silicon substrates in silicon molecular beam epitaxy

Abstract

This letter reports UV ozone cleaning of Si substrates for obtaining defect-free molecular beam epitaxial films by low-temperature in vacuum preheating. By using UV ozone cleaning, the high temperatures above 1200 °C required for removing surface carbon in the conventional method can be significantly lowered to below 1000 °C, since the UV ozone cleaning functions to remove carbon.