Poly-gate sidewall oxidation induced submicrometer MOSFET degradation

Abstract

The effect of poly-gate sidewall oxidation on short-channel MOSFET behavior is examined. The gain, threshold voltage, and apparent electrical channel length are shown to be very sensitive to the location of the n/sup -/ junction edge with respect to the poly-gate edge for a lightly-doped-drain NMOS transistor. New guidelines for the design of submicrometer MOSFETs based on an analysis of the sidewall oxidation of the polysilicon after gate definition are proposed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>