The preparation of single-crystal 4H-SiC film by pulsed XeCl laser deposition

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

H. Morkoç̌, S. Strite, Guangjun Gao et al. · Journal of Applied Physics · 1994 · 2.7K citations

Engineering, Electrical Engineering, Materials Science +17

Preparation of Y-Ba-Cu oxide superconductor thin films using pulsed laser evaporation from high <i>T</i> <i>c</i> bulk material

D. Dijkkamp, T. Venkatesan, X. D. Wu et al. · Applied Physics Letters · 1987 · 1.1K citations

Natural Sciences, Materials Science, Physics +14

Progress in silicon carbide semiconductor electronics technology

Philip G. Neudeck · Journal of Electronic Materials · 1995 · 271 citations

Engineering, Electrical Engineering, Materials Science +12

Conversion of Si to epitaxial SiC by reaction with C2H2

C. J. Mogab, H. J. Leamy · Journal of Applied Physics · 1974 · 137 citations

Engineering, Materials Engineering, Materials Science +17

Crystallographic Imperfections in Epitaxially Grown Silicon

G. R. Booker, R. Stickler · Journal of Applied Physics · 1962 · 123 citations

Natural Sciences, Materials Engineering, Materials Science +17