Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations - Concepedia

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Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations

14

Citations

21

References

2002

Year

J. Zhang, A. Ellison, Örjan Danielsson, Margareta K. Linnarsson, Anne Henry, Erik Janzén

Journal of Crystal Growth

Down-flow OrientationsEngineeringApplied PhysicsEpitaxial GrowthCarbide

References

	Year	Citations

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