Electronics Letters · 1986 · 23 citations · 0 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsCutoff FrequencyGate Delay ModelingHeterojunction Bipolar TransistorsHeterostructure Field-effect TransistorsHeterostructure TransistorsHigh-frequency Electronics
GaAs/AlGaAs collector-top heterojunction bipolar transistors with magnesium and phosphorus double-implanted external bases were fabricated. A cutoff frequency of 17 GHz and a gate delay time of 63 ps for DCTL were obtained. These results indicate the potential of collector-top HBTs for high-speed ICs.