Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2007 · 12 citations · 5 references
Electrical EngineeringEngineeringRf SemiconductorCircuit SystemNanoelectronicsElectronic EngineeringComplementary Sige Bipolar-Analog DesignMixed-signal Integrated CircuitSchottky Barrier DiodesPackage SizeMicroelectronicsHigh SpeedSemiconductor DeviceElectronic Circuit
An oxide isolated complementary SiGe base bipolar technology is presented that incorporates JFETs, poly-and thin-film resistors, capacitors and Schottky Barrier diodes for high-precision, high-voltage, high speed, low-noise analog applications at significantly reduced package size.
5
Current status and future trends of SiGe BiCMOS technology
D.L. Harame, D. Ahlgren, Douglas Coolbaugh et al. · IEEE Transactions on Electron Devices · 2001 · 167 citations
Rashid Bashir, F. Hébert, J. DeSantis et al. · IEEE Transactions on Electron Devices · 2001 · 31 citations
Vertically Integrated Pnp, Electrical Engineering, Polycrystalline Silicon Emitters +12