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Observation of spin splitting in single InAs self-assembled quantum dots in AlAs
59
Citations
7
References
1998
Year
EngineeringSpin SystemsMagnetic ResonanceEmitter Accumulation LayerSpintronic MaterialSpin DynamicSpin PhenomenonQuantum MaterialsMagneto-tunneling SpectroscopyQuantum SciencePhysicsQuantum DeviceSpin SplittingQuantum MagnetismSpintronicsG FactorNatural SciencesApplied PhysicsCondensed Matter PhysicsQuantum DevicesQuantum Photonic Device
Using magneto-tunneling spectroscopy, we observe the Zeeman spin splitting of the ground state of a single InAs quantum dot grown within AlAs. We obtain values for the g factor of different quantum dots between +0.52±0.08 and +1.6±0.2, with magnetic field applied in the plane of the dot. This value for the g factor is considerably different from that of bulk InAs (g=−14.8), and we explain this using a simple three band k⋅p calculation. Using the spin split states of the dot as a probe, we observe the complete spin polarization of the emitter accumulation layer.
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