Resonant magnetotunneling through individual self-assembled InAs quantum dots

Abstract

Resonant peaks are observed in the low-temperature current-voltage I(V) characteristics of a single-barrier GaAs/AlAs/GaAs diode with InAs quantum dots incorporated in the AlAs tunnel barrier. We argue that each peak arises from single-electron tunneling through a discrete zero-dimensional state of an individual InAs dot in the barrier. Each peak splits into sharp components for magnetic field B\ensuremath{\parallel}I; the I(V) curve probes the density of Landau-quantized states in the emitter-accumulation layer. A dot size of \ensuremath{\approxeq}10 nm was estimated from the diamagnetic peak shift for B\ensuremath{\perp}I. \textcopyright{} 1996 The American Physical Society.