Japanese Journal of Applied Physics · 1994 · 94 citations · 0 references
Natural SciencesElectrical EngineeringMaterials SciencePlasma PhysicsSemiconductor DevicesSurface ScienceHigh-temperature PlasmasPlasma FundamentalsPlasma Surface TreatmentPlasma-surface InteractionsRadiation Damage In MaterialsRadiation-resistant MaterialsEtch DamageEtch RateEtchingPlasma-induced DamagePlasma-induced Surface DamageRadiation DamageRadiation Damage MechanismsWet Etching
The formation of a surface-damaged layer of gate SiO 2 induced by exposure to plasma for gate etching led to the increase in etch rate of SiO 2 during HF wet treatment. The effects of vacuum ultraviolet (VUV) photons from various gas plasmas generated by an electron cyclotron resonance (ECR) plasma system and a helicon plasma system were evaluated. It was found that the depth of the damaged layer depends on the energy and penetration depth of VUV radiation. The damaged layer grew exponentially with distance from the surface and was extremely disordered, making it more susceptible to the HF etchant.