Growth of abrupt Ge layers in Si (100)

Structurally induced optical transitions in Ge-Si superlattices

T. P. Pearsall, J. Bevk, L. C. Feldman et al. · Physical Review Letters · 1987 · 339 citations

Natural Sciences, Materials Science, Physics +16

Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxy

Subramanian S. Iyer, Robert A. Metzger, F. G. Allen · Journal of Applied Physics · 1981 · 135 citations

Engineering, Materials Engineering, Materials Science +17

Reflection High-Energy Electron Diffraction Intensity Oscillations during Ge_xSi_1-x MBE Growth on Si(001) Substrates

K. SAKAMOTO, Tsunenori Sakamoto, Satoru Nagao et al. · Japanese Journal of Applied Physics · 1987 · 95 citations

Engineering, Materials Engineering, Materials Science +17

Raman scattering study of amorphous Si-Ge interfaces

P. D. Persans, A. F. Ruppert, B. Abeles et al. · Physical review. B, Condensed matter · 1985 · 73 citations

Natural Sciences, Materials Science, Physics +17

A new UHV system for channeling/blocking analysis of solid surfaces and interfaces

R. M. Tromp, Holger Kersten, E.H.A. Granneman et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1984 · 63 citations

Natural Sciences, Electrical Engineering, Interface Science +5