Paul Pukite - Concepedia

Author

Paul Pukite

Also Known As

Boem, Henk Dijkstra, Koji Yamazaki, Martin Archer Pukite, P. Pukite, P. R. Pukite, P.R. Pukite, Paul PUKITE, Paul Pukite, Paul R. Pukite

Publications

Citations

H-Index

Concepts

All Affiliations

University of Minnesota IBM Research - Thomas J. Watson Research Center IBM (United States)Simon Fraser University

About

Paul Pukite is an author at University of Minnesota specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	1.5K
2	Applied Physics	15	16	1.2K
3	Electrical Engineering	4	4	535
4	Natural Sciences	2	2	318
5	Computer Engineering	1	1	20

Paul Pukite

Publications

1.8K

Citations

H-Index

Page 1

	Year	Citations
Damped oscillations in reflection high energy electron diffraction during GaAs MBE J. M. Van Hove, Craig S. Lent, Paul Pukite, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Electrical EngineeringEngineeringPhysicsDiffractive OpticOptical Properties	1983	358
Birth-death models of epitaxy P. I. Cohen, G.S. Petrich, Paul Pukite, Surface Science PhysicsBirth-death ModelsLongevityLife ExpectancyTransgenerational Effect	1989	257
Diffraction from stepped surfaces Paul Pukite, Craig S. Lent Surface Science Geometric ModelingStepped SurfacesEngineeringPhysicsDiffractive Optic	1985	234
Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering Subramanian S. Iyer, J. C. Tsang, M. W. Copel, Applied Physics Letters Materials ScienceGrowth Temperature DependenceEpitaxial GrowthGrowth TemperatureEngineering	1989	143
The meandering of steps on GaAs(100) Paul Pukite, G.S. Petrich, S. Batra, Journal of Crystal Growth Electronic EngineeringApplied PhysicsEngineeringPhysics	1989	90
Multilayer step formation after As adsorption on Si (100): Nucleation of GaAs on vicinal Si Paul Pukite, P. I. Cohen Applied Physics Letters EngineeringOptoelectronic DevicesSilicon On InsulatorSemiconductor NanostructuresSemiconductors	1987	90
Molecular beam epitaxy of metastable, diamond structure Sn<i>x</i>Ge1−<i>x</i> alloys Paul Pukite, Alex Harwit, Subramanian S. Iyer Applied Physics Letters Materials EngineeringMaterials ScienceLayer ThicknessDiamond Crystal StructureEngineering	1989	89
The dependence of RHEED oscillations on MBE growth parameters J. M. Van Hove, Paul Pukite, P. I. Cohen Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Flux UniformityEngineeringCrystal Growth TechnologyMbe GrowthElectron Diffraction	1985	84
Suppression of antiphase domains in the growth of GaAs on Ge(100) by molecular beam epitaxy Paul Pukite, P. I. Cohen Journal of Crystal Growth Ii-vi SemiconductorElectrical EngineeringEngineeringPhysicsApplied Physics	1987	74
Reflection high energy electron diffraction studies of epitaxial growth on semiconductor surfaces P. I. Cohen, Paul Pukite, J. M. Van Hove, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films SemiconductorsMaterials ScienceEngineeringPhysicsCrystalline Defects	1986	70

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