Concepedia

Interface Abruptness

Interface Abruptness is a metric in epitaxial growth that quantifies the sharpness of the transition between two adjacent crystalline layers by measuring the extent to which compositional or structural changes occur over an atomic-scale distance, distinguishing it from gradual or diffuse interfacial profiles.

141

Publications

8.1K

Citations

587

Authors

202

Institutions

Publications per year

2017–2026

7

Parents

Publications

141

Why some interfaces cannot be sharp

Naoyuki Nakagawa, Harold Y. Hwang, David A. Muller · Nature Materials · 2006 · 1.5K citations · Full text

, , +10

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Hongping Zhao, Guangyu Liu, Jing Zhang et al. · Optics Express · 2011 · 567 citations · Full text

, , +17

The growth of rough surfaces and interfaces

Paul Meakin · Physics Reports · 1993 · 416 citations

, , +12

Atomic structure of the NiSi<sub>2</sub>/(111)Si interface

D. Cherns, G. R. Anstis, J. L. Hutchison et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1982 · 252 citations

, , +17

Interface defects, reference spaces and the Frank–Bilby equation

J. P. Hirth, R.C. Pond, R.G. Hoagland et al. · Progress in Materials Science · 2012 · 237 citations

, , +16

1–5 of 141

Authors

587

  1. GP
    G. Patriarche

    Centre National de la Recherche Scientifique, France

    3 publications · 124 citations

    3

    h-index

  2. DA
    David A. Muller

    Cornell University, United States

    3 publications · 1.7K citations

    3

    h-index

  3. AO
    A. Ourmazd

    AT&T (United States), United States

    3 publications · 218 citations

    3

    h-index

  4. DG
    Darrell G. Schlom

    Cornell University, United States

    2 publications · 247 citations

    2

    h-index

  5. SJ
    S. J. Pearton

    University of Florida, United States

    2 publications · 44 citations

    2

    h-index

1–5 of 587

Institutions

202

  1. Centre National de la Recherche Scientifique

    Paris, France

    9 h-index

    46 publications

    1.4K citations

  2. AT&T (United States)

    Bedminster, United States

    7 h-index

    29 publications

    1.7K citations

  3. The University of Tokyo

    Tokyo, Japan

    5 h-index

    18 publications

    3.4K citations

  4. University of Illinois Urbana-Champaign

    Urbana, United States

    4 h-index

    18 publications

    255 citations

  5. University of Michigan

    Ann Arbor, United States

    3 h-index

    9 publications

    480 citations

  6. National Laboratory of the Rockies

    Golden, United States

    3 h-index

    5 publications

    188 citations

  7. University of Oxford

    Oxford, United Kingdom

    3 h-index

    9 publications

    1.1K citations

  8. Paul Drude Institute for Solid State Electronics

    Berlin, Germany

    3 h-index

    15 publications

    346 citations

1–8 of 202

Venues

  1. Applied Physics Letters

    24 publications · 1.2K citations

    19

    h-index

  2. Journal of Applied Physics

    13 publications · 237 citations

    11

    h-index

  3. Journal of Crystal Growth

    13 publications · 462 citations

    11

    h-index

  4. Nano Letters

    6 publications · 340 citations

    6

    h-index

  5. Physical Review Letters

    PRL · 5 publications · 365 citations

    5

    h-index

1–5