G. R. Anstis

Atomic structure of the NiSi₂/(111)Si interface

D. Cherns, G. R. Anstis, J. L. Hutchison et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1982 · 252 citations

Materials Science, Semiconductors, Engineering +13

Electron channelling contrast imaging of interfacial defects in strained silicon-germanium layers on silicon

A.J. Wilkinson, G. R. Anstis, Jan T. Czernuszka et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1993 · 67 citations

Engineering, Microscopy, Strained Si1 +19

An approach to quantitative compositional profiling at near-atomic resolution using high-angle annular dark field imaging

Stuart Anderson, Christophe R. Birkeland, G. R. Anstis et al. · Ultramicroscopy · 1997 · 65 citations

Physics, Microscopy, Quantitative Compositional Profiling +11

Investigation of amorphous materials by electron diffraction — The effects of multiple scattering

G. R. Anstis, Z. Liu, M. Lake · Ultramicroscopy · 1988 · 57 citations

Materials Science, Multiple Scattering, Engineering +5

<i>n</i>-Beam lattice images. III. Upper limits of ionicity in W₄Nb₂₆O₇₇

G. R. Anstis, D. F. Lynch, A. F. Moodie et al. · Acta Crystallographica Section A · 1973 · 51 citations

Quantum Lattice System, Engineering, Electron Diffraction +21