High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain

Abstract

The extremely thin body (ETB) InGaAs-on-insulator (-OI) metal–oxide–semiconductor field-effect transistors (MOSFETs) on Si substrates were demonstrated by using Ni–InGaAs alloy metal source/drain (S/D). It has been found that a light doping concentration of ∼1016 cm-3 and indium-rich InGaAs channels (In0.7Ga0.3As) provide a high mobility of 1700 cm2 V-1 s-1 even in the channel thickness of 10 nm. This is the first demonstration of ETB III–V-OI MOSFETs combined with the metal S/D technology. We have also achieved excellent ID–VG characteristics with an Ion/Ioff ratio of over 105 and low SS of 120 mV/dec in 5-nm-thick In0.7Ga0.3As-OI MOSFETs.