Structural Analysis of CdTe Hetero-epitaxy on (211) Si

The measurement of threading dislocation densities in semiconductor crystals by X-ray diffraction

John E. Ayers · Journal of Crystal Growth · 1994 · 471 citations

Materials Science, Dislocation Densities, Engineering +11

Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors

S. M. Johnson, David R. Rhiger, J. P. Rosbeck et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1992 · 205 citations

Optical Materials, Engineering, Photovoltaics +20

Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy

W. J. Everson, Christopher Ard, J. L. Sepich et al. · Journal of Electronic Materials · 1995 · 149 citations

Materials Science, Cdznte Substrates, Chemistry +1

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

Nibir K. Dhar, P. R. Boyd, M. Martinka et al. · Journal of Electronic Materials · 2000 · 55 citations

Materials Science, Semiconductors, Oxide Heterostructures +9

Post-growth thermal annealing of GaAs on Si(001) grown by organometallic vapor phase epitaxy

John E. Ayers, L. J. Schowalter, S. K. Ghandhi · Journal of Crystal Growth · 1992 · 51 citations

Materials Engineering, Materials Science, Engineering +7