Time and Frequency Domain Analysis of MLGNR Interconnects

Abstract

Multilayer graphene nanoribbons (MLGNRs) have potentially provided attractive solutions in an intensely growing researched area of interconnects. However, for MLGNR interconnects, the doping is inevitable since the conductivity of neutral MLGNR is much lower than even Cu. Therefore, a doped MLGNR can potentially exhibits smaller resistance in comparison to Cu wires. This paper analyzes and compares the power, delay, and bandwidth performance of Cu and doped MLGNR using an equivalent single conductor model. For similar dimensions, the overall delay and power dissipation of doped MLGNR is substantially smaller by 86.13% and 43.72%, respectively, in comparison to the Cu interconnects. Moreover, MLGNR demonstrates prominently improved bandwidth and relative stability at global interconnect dimensions. However, a narrow width MLGNR in a realistic scenario exhibits rough edges that significantly reduces the mean free path and, thereby, raises its resistance. Considering these facts, this paper for the first time analyzes and compares the performance of Cu and MLGNR interconnects with different edge roughness conditions.