Analytical Chemistry · 2007 · 21 citations · 23 references
EngineeringElectrical EngineeringMicroelectronicsMicrofabricationSemiconductor DevicesMass SpectrometryMems FabricationMicromachiningDeep EtchingDeep Reactive Ion EtchingIon MobilityIon Mobility SpectrometryReactive Ion EtchingSilicon On Insulator MicromachiningSilicon-on-insulator TechnologyTime-of-flight Mass Spectrometry
Bradbury–Nielsen gates are a standard way to gate or steer charged particle beams in ion mobility spectrometry and time‑of‑flight mass spectrometry; they consist of interleaved electrodes that allow undeflected passage at equal potentials and deflect ions when a voltage is applied, and previous devices were assembled mechanically by winding wires across an aperture. We describe a micromachining method for making monolithic BNGs using deep reactive ion etching of silicon‑on‑insulator wafers. This method enables electrodes with spacings of 25–100 µm, 20 µm thick, covering a 5 mm × 5 mm active area, and its performance was characterized by ion imaging in a pseudorandom time‑of‑flight mass spectrometer.
Bradbury−Nielsen gates (BNGs) are a standard way for gating or steering beams of charged particles in ion mobility spectrometry and time-of-flight mass spectrometry. They consist of a pair of interleaved electrodes that when at the same potential allow ions to pass through the electrodes undeflected and, when a voltage is applied, cause the ions to be deflected from their propagation axis. Previous efforts to construct such devices have relied on mechanical assembly by winding wires across an aperture. We describe a micromachining method for making monolithic BNGs using deep reactive ion etching of silicon-on-insulator wafers. This method enables the creation of electrodes with spacings ranging from 25 to 100 μm with a thickness of 20 μm, covering a 5 mm by 5 mm active area. We characterize the performance of these micromachined BNGs by ion imaging in a pseudorandom time-of-flight mass spectrometer.
23
Absolute Values of the Electron Mobility in Hydrogen
Norris E. Bradbury, Russell A. Nielsen · Physical Review · 1936 · 339 citations
Ion trap in a semiconductor chip
D. Stick, W. K. Hensinger, S. Olmschenk et al. · Nature Physics · 2005 · 228 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +14