Thermal stress analysis of silicon bulk single crystal during Czochralski growth

Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K

Yasumasa Okada, Yozo Tokumaru · Journal of Applied Physics · 1984 · 1.2K citations

Natural Sciences, Materials Engineering, Materials Science +17

A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals

A. S. Jordan, R. Caruso, A. R. Von Neida · Bell System Technical Journal · 1980 · 345 citations

Engineering, Electrical Engineering, Materials Science +17

A comparative study of thermal stress induced dislocation generation in pulled GaAs, InP, and Si crystals

A. S. Jordan, R. Caruso, A. R. VonNeida et al. · Journal of Applied Physics · 1981 · 137 citations

Natural Sciences, Materials Engineering, Materials Science +17

The theoretical and experimental fundamentals of decreasing dislocations in melt grown GaAs and InP

A. S. Jordan, A. R. Von Neida, R. Caruso · Journal of Crystal Growth · 1986 · 111 citations

Natural Sciences, Materials Science, Physics +12

Temperature profile and thermal stress calculations in GaAs crystals growing from the melt

M. Duseaux · Journal of Crystal Growth · 1983 · 69 citations

Natural Sciences, Materials Science, Physics +14