Effect of interfaces on quantum confinement in Ge dots grown on Si surfaces with a SiO2 coverage - Concepedia

Concepedia

Publication | Closed Access

Effect of interfaces on quantum confinement in Ge dots grown on Si surfaces with a SiO2 coverage

60

Citations

28

References

2002

Year

A. A. Shklyaev, Masakazu Ichikawa

Surface Science

Materials ScienceQuantum ConfinementEngineeringPhysicsNanoelectronicsSurface ScienceApplied PhysicsGe DotsSiliceneSemiconductor MaterialSemiconductor Device FabricationSilicon On InsulatorSio2 CoverageSemiconductor Nanostructures

References

	Year	Citations

Page 1