A. A. Shklyaev - Concepedia

Author

A. A. Shklyaev

Institute of Semiconductor Physics ORCID

Also Known As

A A Shklyaev, A. A. SHKLYAEV, A. A. Shklyaev, A. Shklyaev, A.A Shklyaev, A.A. Shklyaev, A. A. Shklyaev, A.А. Shklyaev, A. A. Shklyaev, AA Shklyaev

170

Publications

2.2K

Citations

H-Index

Concepts

All Affiliations

Institute of Semiconductor Physics Novosibirsk State University The University of Tokyo National Institute of Advanced Industrial Science and Technology Japan Science and Technology Agency

About

A. A. Shklyaev is an author at Institute of Semiconductor Physics specializing in engineering, applied physics, and surface science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	48	1.3K
2	Applied Physics	21	50	1.3K
3	Electrical Engineering	9	9	156
4	Natural Sciences	5	5	81
5	Chemistry	5	5	78

A. A. Shklyaev

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Leed studies of vicinal surfaces of silicon B.Z. Olshanetsky, A. A. Shklyaev Surface Science Surface CharacterizationEngineeringPhysicsSurface ScienceApplied Physics	1979	110
Phase transitions on clean Si(110) surfaces B.Z. Olshanetsky, A. A. Shklyaev Surface Science Surface CharacterizationEngineeringPhysicsSurface AnalysisSurface Science	1977	109
LEED investigation of germanium surfaces cleaned by sublimation of sulphide films; structural transitions on clean Ge(110) surface B.Z. Olshanetsky, S.M. Repinsky, A. A. Shklyaev Surface Science Materials ScienceSurface CharacterizationGermanium SurfacesEngineeringLeed Investigation	1977	84
Effect of interfaces on quantum confinement in Ge dots grown on Si surfaces with a SiO2 coverage A. A. Shklyaev, Masakazu Ichikawa Surface Science Materials ScienceQuantum ConfinementEngineeringPhysicsNanoelectronics	2002	60
LEED studies of vicinal surfaces of germanium B.Z. Olshanetsky, S.M. Repinsky, A. A. Shklyaev Surface Science Surface AnalysisLeed StudiesPhysicsGermanene	1977	53
Ge islands on Si(111) at coverages near the transition from two-dimensional to three-dimensional growth A. A. Shklyaev, Motoshi Shibata, Masakazu Ichikawa Surface Science PhysicsApplied PhysicsSiliceneThree-dimensional GrowthGe Islands	1998	53
Three-dimensional Si islands on Si(001) surfaces A. A. Shklyaev, Masakazu Ichikawa Physical review. B, Condensed matter Materials ScienceSemiconductorsEngineeringPhysicsCrystalline Defects	2001	52
Optical Anisotropy of Oxidized Si(001) Surfaces and Its Oscillation in the Layer-By-Layer Oxidation Process Tetsuji Yasuda, Satoshi Yamasaki, Matsuhiko Nishizawa, Physical Review Letters	2001	50
Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage Alexander V. Kolobov, A. A. Shklyaev, H. Ōyanagi, Applied Physics Letters Local StructureEngineeringSilicon On InsulatorGe NanoislandsIi-vi Semiconductor	2001	47
Instability of two-dimensional layers in the Stranski-Krastanov growth mode of Ge on Si(111) A. A. Shklyaev, Motoshi Shibata, Masakazu Ichikawa Physical review. B, Condensed matter Materials ScienceStranski-krastanov Growth ModeGe LayersIi-vi SemiconductorEngineering	1998	39

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