Japanese Journal of Applied Physics · 1983 · 10 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice CharacterizationIon ImplantationMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor InterfacesCapacitance-voltage CharacteristicsCapacitance-voltage MeasurementsImplantation Through Thin FilmsInterface StructureOxide Layer FormationOxide Layer MorphologySilicon-on-insulator TechnologyVoltage
The electrical characteristics of an upper interface on a buried oxide layer formed by oxygen implantation in an Si wafer and subsequent thermal annealing were studied using an MOS diode and capacitance-voltage (C-V) measurements. The measured C-V curves strongly depended on the ion dose. The C-V curve was independent of the gate voltage for a dose of 1.2×10 18 cm -2 , voltage-dependent for doses above 1.8×10 18 cm -2 , and similar to those for thermal oxide for a dose of 2.4×10 18 cm -2 . This strong dependence on the ion dose is considered to result from a change in the interface structure with increase in dose. In this change, the transition layer existing between the buried oxide and the upper Si layer at low doses, which shields the upper Si layer from external electric fields, disappears with increase in dose.
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Statistics of the Recombinations of Holes and Electrons
W. Shockley, W. T. Read · Physical Review · 1952 · 6.4K citations