The Electrothermal Large-Signal Model of Power MOS Transistors for SPICE

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> In this paper, the isothermal model of power MOS transistors offered by the producer of these devices and the electrothermal model of these devices proposed by the authors are presented. The results of experimental verification of both the models are given as well. </para>