Modelling CoolMOS transistors in SPICE

Abstract

The paper deals with the problem of investigating the temperature influence on the CoolMOS transistor characteristics. The Infineon Technologies electrothermal model attached to SPICE is analysed in detail. The model has been verified experimentally for SPP11N60C2, at different cooling conditions of the transistor. Some modifications of the model in addition to the changes of its parameter values are also proposed in the paper. The results of simulations and measurements are presented too.