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6.6+ GHz Low Vmin, read and half select disturb-free 1.2 Mb SRAM
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2007
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Unknown Venue
Low-power ElectronicsElectrical EngineeringGhz Low VminFunctional ReadVlsi DesignOperating RangeEngineeringEmerging Memory TechnologyComputer EngineeringMemory DevicesSemiconductor MemoryIntegrated CircuitsResistive Random-access MemoryMicroelectronicsMb Sram
A fully functional read and half select disturb-free 1.2 Mb SRAM is demonstrated. Measured results show an operating range of 0.4V to 1.5V and -25°C to 100°C, speed of 6.6+ GHz at IV, 25°C and yield of 90-100%.