IEEE Transactions on Electron Devices · 1986 · 10 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesNoise In Analog CircuitsNoise In Electronic DevicesBreakdown VoltageGaas Microwave Integrated CircuitsLow-noise Microwave TransistorsMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated CircuitsNoise FigureNoise In High-frequency Semiconductor DevicesTransconductance
A new self-align technology suitable for fabrication of GaAs low-noise FET's and MMIC's is demonstrated. The present technology, which is based upon sidewall technology and pattern inversion technology, provides a negligible short-channel effect, a low-parasitic resistance and a well-controlled breakdown voltage, all of which are essentially required for high microwave performance. An experimental 0.5-µm gate FET fabricated using the new process exhibits a high transconductance such as 220 mS/mm and a low-noise figure such as 1.6 dB at 12 GHz.
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Control of gate—Drain avalanche in GaAs MESFET's
S. H. Wemple, W.C. Niehaus, H. M. Cox et al. · IEEE Transactions on Electron Devices · 1980 · 130 citations
A self-aligned source/drain planar device for ultrahigh-speed GaAs MESFET VLSIs
Naoki Yokoyama, T. Mimura, M. Fukuta et al. · 1981 · 47 citations