Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy

Abstract

Be-doped GaN layers have been grown on Si(111) by molecular beam epitaxy. The relative Be concentration was measured by secondary ion mass spectroscopy analysis. Photoluminescence spectra have been taken under continuous wave and time-resolved conditions. A new emission at 3.384 eV, which is probably related to substitutional Be, is reported, together with its first and second order phonon replica. Clear blue-shifts are observed when increasing temperature and excitation power, suggesting that this emission is associated with a transition from a residual donor to the Be acceptor. From time-resolved spectra, a very slow and strongly non-exponential decay, as well as a red-shift of the peak energy position with time, confirm the donor-acceptor character of the Be-related emission. The estimated ionization energy of the acceptor is around 90 meV, so Be is the shallowest p-dopant ever reported in GaN.