C.H. Molloy

Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys

G. M. Laws, E.C. Larkins, I. Harrison et al. · Journal of Applied Physics · 2001 · 173 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy

E. Calleja, M. A. Sánchez-Garcı́a, Durga Basak et al. · Physical review. B, Condensed matter · 1998 · 96 citations

Engineering, Materials Science, Physics +17

Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy

F.J. Sánchez, F. Calle, M. A. Sánchez-Garcı́a et al. · Semiconductor Science and Technology · 1998 · 49 citations

Engineering, Materials Science, Physics +17

Minority carrier effects in GaInP laser diodes

Scott A. Wood, C.H. Molloy, Peter M. Smowton et al. · IEEE Journal of Quantum Electronics · 2000 · 47 citations

Engineering, Electrical Engineering, Materials Science +17

Direct monitoring of thermally activated leakage current in AlGaInP laser diodes

Scott A. Wood, Peter M. Smowton, C.H. Molloy et al. · Applied Physics Letters · 1999 · 20 citations · Full text

Engineering, Electrical Engineering, Materials Science +17