J. M. Blanco

Effect of Ga/Si interdiffusion on optical and transport properties of GaN layers grown on Si(111) by molecular-beam epitaxy

E. Calleja, M. A. Sánchez-Garcı́a, Durga Basak et al. · Physical review. B, Condensed matter · 1998 · 96 citations

Engineering, Materials Science, Physics +17

Experimental evidence for a Be shallow acceptor in GaN grown on Si(111) by molecular beam epitaxy

F.J. Sánchez, F. Calle, M. A. Sánchez-Garcı́a et al. · Semiconductor Science and Technology · 1998 · 49 citations

Engineering, Materials Science, Physics +17

Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy

M. A. Sánchez-Garcı́a, E. Calleja, F.J. Sánchez et al. · Journal of Electronic Materials · 1998 · 42 citations

Engineering, Materials Engineering, Materials Science +14

Yellow luminescence in Mg-doped GaN

F.J. Sánchez, F. Calle, Durga Basak et al. · MRS Internet Journal of Nitride Semiconductor Research · 1997 · 10 citations · Full text

Engineering, Materials Engineering, Materials Science +14