Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices

Proposal for strained type II superlattice infrared detectors

D. L. Smith, C. Mailhiot · Journal of Applied Physics · 1987 · 712 citations

Natural Sciences, Materials Science, Physics +17

Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

C. H. Grein, Paul M. Young, Michael E. Flatté et al. · Journal of Applied Physics · 1995 · 205 citations

Engineering, Materials Engineering, Materials Science +17

Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence

Blair C. Connelly, Grace D. Metcalfe, Hongen Shen et al. · Applied Physics Letters · 2010 · 149 citations

Engineering, Materials Science, Optoelectronics +14

Carrier lifetime measurements in short-period InAs/GaSb strained-layer superlattice structures

D. Donetsky, Stefan P. Svensson, L. E. Vorobjev et al. · Applied Physics Letters · 2009 · 143 citations

Engineering, Materials Engineering, Materials Science +17

Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization

Stefan P. Svensson, D. Donetsky, Dinghui Wang et al. · Journal of Crystal Growth · 2011 · 129 citations

Natural Sciences, Materials Science, Physics +17