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In Situ Vapor Phase Pregate Oxide Cleaning and Its Effects on Metal‐Oxide‐Semiconductor Device Characteristics
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1995
Year
Materials ScienceSemiconductor TechnologyElectrical EngineeringChemical EngineeringEngineeringRapid Thermal OxidationOxide ElectronicsOxide SemiconductorsApplied PhysicsSurface ScienceMetal‐oxide‐semiconductor Device CharacteristicsSemiconductor Device FabricationSilicon On InsulatorPlasma EtchingCluster ToolChemical Vapor DepositionSemiconductor DeviceVapor Phase Cleaning
Vapor phase cleaning of Si(100) surface in a cluster tool was studied. Electrical properties of the interface and the integrity of 55 Å films formed by in situ pregate oxide cleaning and rapid thermal oxidation (RTO) were characterized. Pregate oxide cleaning included anhydrous hydrofluoride (AHF) vapor for etching of native or sacrificial oxide, hydrocarbon removal, and trace metallic contamination elimination. Compared with a conventional wet cleaning procedure, in situ cleaning results in an equivalent interface and film with higher charge‐to‐breakdown . A two‐step cleaning procedure consisting of AHF etching and metal removal results in oxides with the highest .