Planarization of GaN(0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst

Abstract

A novel planarization technique for the GaN(0001) surface has been developed. In this method, the surface is oxidized by a photo-electrochemical reaction and the resulting oxide is removed using a solid acidic/basic catalyst. Smooth surfaces that are free from scratches and etch pits are obtained. Photoluminescence analysis shows that the intensity of the band-edge luminescence markedly increases after the planarization.