Influence of different treatment techniques on the barrier properties of MOCVD TiN against copper diffusion

Synthesis of thin films by atmospheric pressure chemical vapor deposition using amido and imido titanium(IV) compounds as precursors

Renaud M. Fix, Roy G. Gordon, David M. Hoffman · Chemistry of Materials · 1990 · 177 citations

Natural Sciences, Chemistry, Materials Science +12

Resistivity reduction and chemical stabilization of organometallic chemical vapor deposited titanium nitride by nitrogen rf plasma

M. Daněk, Min Liao, Jochi Tseng et al. · Applied Physics Letters · 1996 · 49 citations

Natural Sciences, Materials Engineering, Materials Science +17

Investigation of copper metallization induced failure of diode structures with and without a barrier layer

Ch. Kaufmann, M. Rennau, Th. Werner · Microelectronic Engineering · 1997 · 24 citations

Engineering, Electrical Engineering, Materials Science +16

Investigation of the plasma treatment in a multistep TiN MOCVD process

Stephan Riedel, Stefan E. Schulz · Microelectronic Engineering · 2000 · 15 citations

Engineering, Materials Engineering, Physics +13