The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy

Abstract

GaN was grown by molecular beam epitaxy using an rf plasma source. Growth under gallium-rich conditions at 730 °C was required to produce high quality layers as indicated by photoluminescence, Hall effect, atomic force microscopy, and x-ray diffraction measurements. Atomic hydrogen has a significant effect for Ga-rich growth, increasing growth rates by as much as a factor of 2.