Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 20 citations · 0 references
Materials ScienceSurface CharacterizationContrast ReversalEngineeringPhysicsMicroscopyProbe MicroscopyScanning Probe MicroscopySurface ScienceApplied PhysicsSilicon SurfaceScanning Force MicroscopyAtomic PhysicsKink SitesSurface AnalysisVacuum DeviceSilicon On InsulatorMicroelectronics
An ultrahigh vacuum atomic force microscope, operated in the noncontact mode, is used to characterize n-doped Si(111) surfaces. Ionized impurities are observed with electrostatic forces, demonstrating contrast reversal by changing the polarity of the voltage between probing tip and sample. The impurities form one-dimensional domains on the silicon surface. Steps and lines, connecting kink sites, are preferentially occupied by these impurities.