Characterization of metal/GaN Schottky interfaces based on I–V–T characteristics

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Large Schottky barriers for Ni/p-GaN contacts

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Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition

Doo‐Hyeb Youn, M. Lachab, Maosheng Hao et al. · Japanese Journal of Applied Physics · 1999 · 45 citations

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