Fabrication of thin silicon-on-insulator flims using laser recrystallisation

Abstract

The letter describes a technique to obtain thin (130 nm) silicon-on-insulator (SOI) films. A 550 nm-thick film of silicon is first deposited on an insulating oxide and recrystallised using an argon laser. Owing to the combined use of seeding windows and antireflection patterns, the recrystallised film is single-crystal. The SOI film is then planarised using thick resist spinning and plasma etch. Finally, the film thickness is reduced to 130 nm by thermal oxidation.