Acceptor states at the SiSiO2 int0erface generated by UV and their effect on electron mobility

A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures

F. B. McLean · IEEE Transactions on Nuclear Science · 1980 · 580 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Origin of Interface States and Oxide Charges Generated by Ionizing Radiation

C. T. Sah · IEEE Transactions on Nuclear Science · 1976 · 192 citations

Engineering, Materials Engineering, Materials Science +17

Effects of avalanche injection of electrons into silicon dioxide—generation of fast and slow interface states

Sz‐Nian Lai, Donald R. Young · Journal of Applied Physics · 1981 · 157 citations

Engineering, Materials Science, Physics +16

The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interface

Massimo V. Fischetti, Z. A. Weinberg, J. A. Calise · Journal of Applied Physics · 1985 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

Radiation-induced space-charge buildup in MOS structures

J.P. Mitchell · IEEE Transactions on Electron Devices · 1967 · 107 citations

Natural Sciences, Materials Science, Physics +16