J. A. Calise

The effects of water on oxide and interface trapped charge generation in thermal SiO2 films

F. J. Feigl, Donald R. Young, D. J. DiMaria et al. · Journal of Applied Physics · 1981 · 205 citations

Engineering, Silicon On Insulator, Charge Transport +17

The effect of gate metal and SiO2 thickness on the generation of donor states at the Si-SiO2 interface

Massimo V. Fischetti, Z. A. Weinberg, J. A. Calise · Journal of Applied Physics · 1985 · 115 citations

Materials Science, Semiconductors, Electrical Engineering +15

Reduction of electron and hole trapping in SiO2 by rapid thermal annealing

Z. A. Weinberg, Donald R. Young, J. A. Calise et al. · Applied Physics Letters · 1984 · 64 citations

Engineering, Short Anneals, Optoelectronic Devices +17

Reduction of electron trapping in silicon dioxide by high-temperature nitrogen anneal

Sz‐Nian Lai, Donald R. Young, J. A. Calise et al. · Journal of Applied Physics · 1981 · 56 citations

Electrical Engineering, Semiconductor Device, Engineering +15

Localized electronic states and resonant Raman scattering from localized and quasiresonant phonons in Si-Ge layers

J. C. Tsang, Subramanian S. Iyer, J. A. Calise et al. · Physical review. B, Condensed matter · 1989 · 11 citations

Optical Materials, Engineering, Quasiresonant Phonons +19