Effects of growth parameters on layer properties for InP and related alloys grown by MOCVD

Band gap versus composition and demonstration of Vegard’s law for In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> lattice matched to InP

R. E. Nahory, M. A. Pollack, W. D. Johnston et al. · Applied Physics Letters · 1978 · 415 citations

Natural Sciences, Materials Science, Physics +16

Low pressure metalorganic chemical vapor deposition of InP and related compounds

Manijeh Razeghi, M.A. Poisson, J.P. Larivain et al. · Journal of Electronic Materials · 1983 · 93 citations

Natural Sciences, Chemistry, Materials Science +6

Properties of Epitaxial Gallium Arsenide from Trimethylgallium and Arsine

Susumu Ito, Tsuneo Shinohara, Yasuo Seki · Journal of The Electrochemical Society · 1973 · 69 citations

Natural Sciences, Materials Science, Physics +16

Vapor-solid distribution relation in MOCVD GaAsxP1−x and InAsxP1−x

Takashi Fukui, Naoto Kobayashi · Journal of Crystal Growth · 1985 · 26 citations

Engineering, Materials Science, Physics +14

High performance, long wavelength opto-electronic components by atmospheric pressure MOVPE

A.W. Nelson, Sandhya Cole, S.S. Wong et al. · Journal of Crystal Growth · 1986 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +15