Effects on power transistors of Terrestrial Cosmic Rays: Study, experimental results and analysis

Abstract

High voltage power transistors used in inverters for photovoltaic panels and avionic applications are naturally exposed to Terrestrial Cosmic Rays, or Atmospheric Neutrons, which are known to induce catastrophic failures such as burnouts or gate ruptures. Accelerated tests on different power MOSFETs and IGBTs technologies were performed in ANITA neutron facility, at Uppsala, Sweden. Experimental details and results will be presented and discussed.