Epitaxial growth of 4H–SiC by sublimation close space technique

Thermodynamic Study of SiC Utilizing a Mass Spectrometer

J. Drowart, G. De Maria, Mark G. Inghram · The Journal of Chemical Physics · 1958 · 372 citations

Natural Sciences, Chemistry, Materials Science +17

Raman scattering from anisotropic LO-phonon–plasmon–coupled mode in <i>n</i>-type 4H– and 6H–SiC

Hiroshi Harima, Shin-ichi Nakashima, Tomoki Uemura · Journal of Applied Physics · 1995 · 228 citations

Natural Sciences, Materials Science, Physics +17

The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of Semiconductors

F. H. Nicoll · Journal of The Electrochemical Society · 1963 · 142 citations

Engineering, Materials Engineering, Materials Science +16

Studies of growth kinetics and polytypism of silicon carbide epitaxial layers grown from the vapour phase

Yu. M. Tairov, V. F. Tsvetkov, S. K. Lilov · Journal of Crystal Growth · 1976 · 38 citations

Natural Sciences, Materials Engineering, Materials Science +16

Growth Studies of Silicon Carbide Crystals

L.J. Kroko · Journal of The Electrochemical Society · 1966 · 34 citations

Natural Sciences, Materials Engineering, Materials Science +16