Structure and properties of silicon carbide grown on porous substrate by vacuum sublimation epitaxy

Abstract

A SiC layer was grown by vacuum sublimation epitaxy on porous silicon carbide. A porous SiC layer about 10 µm thick was fabricated by electrochemical etching of an off-axis 6 H -SiC substrate. The epitaxial layer was ∼ 10 µm thick. Structural and optical properties of the initial substrate and the porous and epitaxial layers were investigated by X-ray, IR-reflection and photoluminescence methods. An epitaxial SiC layer grown on porous SiC exhibits improved characteristics when compared to a SiC layer on a conventional substrate.