Science · 1992 · 125 citations · 36 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsPattern FormationSemiconductor MaterialsEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsDeposition KineticsEpitaxial Film GrowthEpitaxial Growth KineticsInteratomic Potential ModelsIsland Growth KineticsSuperlattice GrowthSurface GrowthThin-film Growth Kinetics
The results of kinetic simulations of the aggregates formed during the deposition of atoms on a semiconductor surface are reviewed. Because the kinetic parameters are poorly known and the accuracy of the existing interatomic potentials has not been sufficiently tested, the goal has been to reach a qualitative understanding of the formation of unusual patterns during growth, such as the segregation of aluminum during the growth of aluminum-gallium-arsenide (AlGaAs) coherent tilted superlattices and the formation of thin, long, and parallel islands during the deposition of Si on an Si(100) surface. Kinetic mechanisms for these phenomena are proposed.
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