<i>p</i>-type behavior in In–N codoped ZnO thin films

Abstract

p -type ZnO thin films have been realized by the In–N codoping method. Secondary ion mass spectroscopy revealed that the nitrogen incorporation was enhanced by the presence of indium in ZnO. The as-grown In–N codoped ZnO film shows acceptable p-type behavior at room temperature with high film quality. A conversion from p-type conduction to n type in a range of temperature was confirmed by Hall effect measurement. The lowest reliable room-temperature resistivity was found to be 3.12Ωcm with a carrier concentration of 2.04×1018cm−3 and a Hall mobility of 0.979cm2V−1S−1. The p-type behavior is stable.