Japanese Journal of Applied Physics · 1999 · 568 citations · 17 references
Natural SciencesMaterials SciencePhysicsElectronic MaterialsSemiconductor MaterialsThin FilmsConductive MaterialsDopingOxide SemiconductorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesDoping In Thin FilmsN-type ConductivityN-type DopingP-type ConductivityP-type DopingP-type Oxide SemiconductorsThin Oxide FilmsZinc Oxides
We report the realization of p-type behavior in ZnO thin films, which are prepared by codoping method using Ga (donor) and N (acceptor) as the dopants. Especially, using active N formed by passing N 2 O gas through an electron cyclotron resonance (ECR) plasma source is quite effective for the acceptor doping. We have observed a room temperature resistivity of 2 Ω·cm and a hole concentration of 4×10 19 cm -3 . These values are enough high for practical applications in various oxide electronic devices.
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P-type electrical conduction in transparent thin films of CuAlO2
Hiroshi Kawazoe, Masahiro Yasukawa, Hiroyuki Hyodo et al. · Nature · 1997 · 2.1K citations
Natural Sciences, Materials Engineering, Materials Science +14