Electrochemical and Solid-State Letters · 2009 · 12 citations · 9 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistryPhysical ChemistryThin FilmsChemical Vapor DepositionMetal MaterialsMetalsThin Film Electrical PropertiesThin-film MaterialsTransition Metal ChemistryChemical Vapor Deposition PrecursorsDiffraction PatternsMetal-organic Chemical Vapor DepositionMetallic Thin FilmsMetalorganic Chemical Vapor DepositionPrecursor ChemistryResistivityX-ray Diffraction Analysis
To investigate the effects of precursor ligands, metallic ruthenium films were deposited by metallorganic chemical vapor deposition (MOCVD) from three different divalent precursors, bis(2,4-dimethylpentadienyl)ruthenium [; bis-open ruthenocene type], (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [Ru(DMPD)(EtCp); half-open ruthenocene type], and bis(ethylcyclopentadienyl)ruthenium [; ruthenocene type]. Their activation energies and the deposition amounts at were 1.27, 1.68, and 2.32 eV and 1.9, 2.3, and , respectively. The X-ray diffraction patterns indicated that the films prepared from were preferentially oriented to (001), whereas the films from and Ru(DMPD) (EtCp) showed random orientations. The resistivity of the films suggested that thinner films with lower resistivity could be deposited using .
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Sang Yeol Kang, Kook Hyun Choi, Seok Kiu Lee et al. · Journal of The Electrochemical Society · 2000 · 53 citations